Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2009-02-10
Smith, Zandra (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S508000, C257SE27098, C257SE21661, C257S393000
Reexamination Certificate
active
07488639
ABSTRACT:
In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.
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Ikeda Shuji
Nishida Akio
Yoshida Yasuko
Antonelli, Terry Stout & Kraus, LLP.
Malek Maliheh
Renesas Technology Corp.
Smith Zandra
LandOfFree
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