Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-21
2009-08-11
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S429000, C257SE21431, C257SE21619
Reexamination Certificate
active
07572705
ABSTRACT:
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major surface and on an active region forming a sidewall of the trench.
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Besser Paul R.
Luning Scott D.
Advanced Micro Devices , Inc.
Wilczewski M.
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