Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2009-02-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000
Reexamination Certificate
active
07492004
ABSTRACT:
According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.
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English language abstract of Japanese Publication No. 06-224429.
Chung Tae-Young
Kim Yong-Sung
Lee Jin-Woo
Marger & Johnson & McCollom, P.C.
Pert Evan
Samsung Electronics Co,. Ltd.
Tran Tan N
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