Trench gate FET with self-aligned features

Details Trench gate FET with self-aligned features Trench gate FET with self-aligned features

2006-09-28

2009-06-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S271000, C438S524000, C438S526000, C438S527000, C438S589000, C257SE29262, C257SE21629

Reexamination Certificate

active

07544571

ABSTRACT:
A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. A gate electrode recessed in each trench is formed. Using a first mask, a body region of a second conductivity type is formed in the semiconductor region by implanting dopants. Using the first mask, source regions of the first conductivity type are formed in the body region by implanting dopants.

REFERENCES:
patent: 4954854 (1990-09-01), Dhong et al.
patent: 5780340 (1998-07-01), Gardner et al.
patent: 6274437 (2001-08-01), Evans
patent: 6489204 (2002-12-01), Tsui
patent: 6548856 (2003-04-01), Lin et al.
patent: 6740920 (2004-05-01), Chidambarrao et al.
patent: 6802719 (2004-10-01), Finney
patent: 6815751 (2004-11-01), Brown et al.
patent: 6861703 (2005-03-01), Inagawa et al.
patent: 6958275 (2005-10-01), Metzler
patent: 6964895 (2005-11-01), Hsu
patent: 6964903 (2005-11-01), Forbes et al.
patent: 2002/0074585 (2002-06-01), Tsang et al.
patent: 2003/0075758 (2003-04-01), Sundaresan et al.
patent: 2003/0168687 (2003-09-01), Chidambarrao et al.
patent: 2004/0113207 (2004-06-01), Hsu et al.
patent: 2005/0056892 (2005-03-01), Seliskar
patent: 2006/0163631 (2006-07-01), Chen et al.
patent: 2006/0237781 (2006-10-01), Marchant et al.
International Search Report of Jan. 24, 2008 for PCT Application No. PCT/US07/78649.
Office Action of Nov. 13, 2007 in U.S. Appl. No. 11/553,493.
Written Opinion of Jan. 24, 2008 for PCT Application No. PCT/US07/78649.

Affiliated with

Also associated with

Rating

Trench gate FET with self-aligned features does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench gate FET with self-aligned features, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench gate FET with self-aligned features will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4119189