Method of fabricating a non-volatile memory device

Details Method of fabricating a non-volatile memory device Method of fabricating a non-volatile memory device

2008-06-27

2009-11-03

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257SE29255

Reexamination Certificate

active

07611946

ABSTRACT:
A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a select line, from being injected into a floating gate of the program-inhibited cell. The program-inhibited cell shares a word line adjacent to the select line such that a trench is formed in the semiconductor substrate between the select line and the adjacent word line to increase a distance between the select line and the word line.

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patent: 2004/0085830 (2004-05-01), Schneider et al.
patent: 2005/0218460 (2005-10-01), Hasegawa et al.
patent: 2008/0054341 (2008-03-01), Natori et al.
patent: 100645065 (2006-11-01), None
patent: 1020070001687 (2007-01-01), None

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