Method of fabricating a semiconductor device with a dopant...

Details Method of fabricating a semiconductor device with a dopant... Method of fabricating a semiconductor device with a dopant...

2008-12-16

2009-12-08

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S643000, C438S660000, C257S751000, C257S758000, C257S774000, C257SE21584

Reexamination Certificate

active

07629239

ABSTRACT:
A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a lower wire, an interlayer insulating film formed on the lower wire and having a via hole exposing the upper surface of the lower wire, a diffusion barrier formed on the inner wall of the via hole, and an upper wire filling the via hole and directly contacting the lower wire, in which a dopant region containing a component of the diffusion barrier is formed in the lower wire in the extension direction of the via hole.

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patent: 10-0385227 (2003-05-01), None
patent: 10-0413828 (2003-12-01), None

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