Interconnect structure having enhanced electromigration...

Details Interconnect structure having enhanced electromigration... Interconnect structure having enhanced electromigration...

2006-11-15

2009-08-04

Rose, Kiesha L (Department: 4116)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07569475

ABSTRACT:
An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner at least partially within a metal interconnect. In one embodiment, a “U-shaped” EM preventing liner is provided that abuts a diffusion barrier that separates conductive material from the dielectric material. In another embodiment, a space is located between the “U-shaped” EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.

REFERENCES:
patent: 4980752 (1990-12-01), Jones, Jr.
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6069072 (2000-05-01), Konecni
patent: 6285082 (2001-09-01), Joshi
patent: 6303505 (2001-10-01), Ngo et al.
patent: 6319819 (2001-11-01), Besser et al.
patent: 6323554 (2001-11-01), Joshi et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6383925 (2002-05-01), Ngo et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6506677 (2003-01-01), Avanzino et al.
patent: 6764951 (2004-07-01), van Ngo
patent: 6797652 (2004-09-01), Ngo et al.
patent: 6818557 (2004-11-01), Ngo et al.
patent: 2005/0224979 (2005-10-01), Marathe

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