Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-12
2009-11-03
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21626, C257SE21640
Reexamination Certificate
active
07611952
ABSTRACT:
Gate insulating films12A and12B of different thickness are formed in element openings16aand16bin the isolation film16of a wafer10. The gate insulating film12B is the thinnest gate insulating film. A dummy insulating film having the same thickness as the thinnest gate insulating film12B is formed in wafer periphery area WP. Gate electrodes20A and20B are formed on the gate insulating films12A and12B, and thereafter an insulating film is deposited on the wafer surface. The deposited insulating film is dry-etched to form side wall spacers22ato22don side walls of the gate electrodes20A and20B. During dry etching, the time when the semiconductor surfaces are exposed in the element opening16band area WP is detected as an etching end point by a change in the emission spectrum intensity of etching byproducts.
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patent: 2003/0109089 (2003-06-01), Mitros et al.
patent: 05-102089 (1993-04-01), None
patent: 07-273097 (1995-10-01), None
Dickstein & Shapiro LLP
Malsawma Lex
Yamaha Corporation
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