Method of manufacture of a trench-gate semiconductor device

Details Method of manufacture of a trench-gate semiconductor device Method of manufacture of a trench-gate semiconductor device

2003-12-08

2009-02-03

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000

Reexamination Certificate

active

07485534

ABSTRACT:
A method of making a trench MOSFET includes forming a layer of porous silicon (26) at the bottom of a trench and then oxidizing the layer of porous silicon (26) to form a plug (30) at the bottom of the trench. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.

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