SRAM device with a power saving module controlled by word...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S063000, C365S072000, C365S189060, C365S189110, C365S227000

Reexamination Certificate

active

07606061

ABSTRACT:
An SRAM device include: a latch unit for retaining data; one or more pass gate transistors controlled by a word line for coupling the latch unit to a bit line and a complementary bit line; and a power saving module coupled to the latch unit for raising a source voltage of the latch unit in response to a control signal on the word line, thereby reducing a leakage current for the latch unit.

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patent: 5715191 (1998-02-01), Yamauchi et al.
patent: 5734604 (1998-03-01), Akamatsu et al.
patent: 6639828 (2003-10-01), Itoh et al.
patent: 6999371 (2006-02-01), Nii
patent: 7158404 (2007-01-01), Lai
patent: 7196960 (2007-03-01), Isoda et al.
patent: 7272068 (2007-09-01), Yamaoka et al.
patent: 7307907 (2007-12-01), Houston
patent: 7428164 (2008-09-01), Yamaoka et al.

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