Method of manufacturing an active region of a semiconductor by d

Details Method of manufacturing an active region of a semiconductor by d Method of manufacturing an active region of a semiconductor by d

1997-01-08

1999-06-15

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438548, H01L 218238

Patent

active

059131160

ABSTRACT:
In semiconductor device fabrication process, an active region of a semiconductor device is formed by diffusing a dopant out of a sidewall spacer. In the fabrication process, a gate electrode having a sidewall adjacent an active region is formed on a substrate and a doped spacer layer having a dopant disposed therein is formed over the substrate and gate electrode. A portion of the spacer layer is then removed to form a spacer on the sidewall of the gate electrode. The dopant in the spacer is diffused into the substrate to form a lightly-doped region in the active region of the substrate. The lightly-doped region may form an LDD region of an LDD structure.

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