Method for producing a CMOS circuit

Details Method for producing a CMOS circuit Method for producing a CMOS circuit

1998-04-29

1999-06-15

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438219, 438225, 257371, H01L 21265

Patent

active

059131152

ABSTRACT:
In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.

REFERENCES:
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patent: 4590663 (1986-05-01), Haken
patent: 5252501 (1993-10-01), Moslehi
patent: 5504031 (1996-04-01), Hsu et al.
patent: 5571733 (1996-11-01), Wu et al.
patent: 5654213 (1997-08-01), Choi
patent: 5670397 (1997-09-01), Chang et al.

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