Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-09
2009-06-16
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C257SE21134
Reexamination Certificate
active
07547593
ABSTRACT:
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.
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Isobe Atsuo
Miyairi Hidekazu
Moriwaka Tomoaki
Shimomura Akihisa
Chaudhari Chandra
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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