Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-09
2009-08-04
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S302000, C257SE21395
Reexamination Certificate
active
07569450
ABSTRACT:
A semiconductor structure and a method for forming the same. The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating region on top of the semiconductor substrate. The semiconductor structure further includes a first semiconductor region on top of and in direct physical contact with the semiconductor substrate. The semiconductor structure further includes a second semiconductor region on top of the insulating region. The semiconductor structure further includes a capacitor in the first semiconductor region and the semiconductor substrate. The semiconductor structure further includes a capacitor electrode contact in the second semiconductor region and the electrically insulating region.
REFERENCES:
patent: 2003/0057487 (2003-03-01), Yamada et al.
patent: 2006/0105536 (2006-05-01), Cheng et al.
Cheng Kangguo
Divakaruni Ramachandra
Radens Carl John
Capella Steven
Diallo Mamadou
International Business Machines - Corporation
Richards N Drew
Schmeiser Olsen & Watts
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