Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-01-03
2009-06-09
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
C438S382000, C438S393000
Reexamination Certificate
active
07544578
ABSTRACT:
A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower conductive layer, forming an intermediate layer over the short prevention layer, wherein the intermediate layer is characterized by randomly structured nanopore features. An upper conductive layer is formed over the random nanopore structured intermediate layer. The upper conductive layer is patterned into an array of individual cells, wherein a measurable electrical parameter of the individual cells has a random distribution from cell to cell with respect to a reference value of the electrical parameter.
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Clevenger Lawrence A.
Colburn Matthew E.
Dalton Timothy J.
Gaidis Michael C.
Hon Wong Keith Kwong
Cantor & Colburn LLP
International Business Machines - Corporation
Nguyen Tuan H
Trepp Robert
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