Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-05
2009-10-13
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21689
Reexamination Certificate
active
07601581
ABSTRACT:
Provided is a manufacturing method of a semiconductor device, which comprises forming a film stack of a gate insulating film, a charge storage film, insulating film, polysilicon film, silicon oxide film, silicon nitride film and cap insulating film over a semiconductor substrate; removing the film stack by photolithography and etching from a low breakdown voltage MISFET formation region and a high breakdown voltage MISFET formation region; forming gate insulating films, polysilicon film and cap insulating film over the semiconductor substrate, forming a gate electrode in the low breakdown voltage MISFET formation region and high breakdown voltage MISFET formation region, and then forming a gate electrode in a memory cell formation region. By the manufacturing technology of a semiconductor device for forming the gate electrodes of a first MISFET and a second MISFET in different steps, the present invention makes it possible to provide the first MISFET and the second MISFET each having improved reliability.
REFERENCES:
patent: 6482698 (2002-11-01), Peschiaroli et al.
patent: 6534363 (2003-03-01), Kim
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 2004-40041 (2004-02-01), None
Shiba Kazuyoshi
Taniguchi Yasuhiro
Chaudhari Chandra
Miles & Stockbridge P.C.
Renesas Technology Corp.
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