Method for manufacturing a semiconductor device having a...

Details Method for manufacturing a semiconductor device having a... Method for manufacturing a semiconductor device having a...

2006-09-29

2009-10-13

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S424000, C257SE21545, C257SE21561

Reexamination Certificate

active

07601582

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a semiconductor substrate to have a SOI structure by an epitaxial process for forming a gate while forming an insulating film pattern in a bottom where a device isolation trench is formed. The method thereby increases the process margin for forming a device isolation film and prevents the punch-through phenomenon to improve electrical characteristics of semiconductor devices and increase product yield.

REFERENCES:
patent: 6194289 (2001-02-01), Lee
patent: 6660596 (2003-12-01), Adkisson et al.
patent: 7217623 (2007-05-01), Kim et al.
patent: 2002/0137271 (2002-09-01), Forbes et al.
patent: 2005/0227435 (2005-10-01), Oh et al.
patent: 2007/0173005 (2007-07-01), Lee
patent: 1020000027402 (2000-05-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device having a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4086424