Method for forming a gate insulating layer of a...

Details Method for forming a gate insulating layer of a... Method for forming a gate insulating layer of a...

2006-12-26

2009-02-24

Scarlett, Shaka (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S287000, C257SE21267, C257SE21625

Reexamination Certificate

active

07494879

ABSTRACT:
Embodiments relate to a method for forming a gate insulating layer, which may include forming a device isolation layer being divided into a device active region and a device isolation region, growing a first oxide layer at an entire surface of the semiconductor substrate as a gate insulating layer, performing a first annealing process to form a diffusion barrier layer an interface between the first oxide layer and the device active region, etching and removing a first oxide layer and a diffusion barrier layer of the core power source wiring region by masking the input/output power source wiring region, growing a second oxide layer on the core power source wiring region, and performing a second annealing process to form an NO gate oxide layer on which an N-rich oxide layer at an interface of the core power source wiring region.

REFERENCES:
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6784060 (2004-08-01), Ryoo
patent: 2004/0102010 (2004-05-01), Khamankar et al.

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