Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-26
1999-05-25
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438396, H01L 218242
Patent
active
059077727
ABSTRACT:
The invention relates to the fabrication of a cylindrical storage node in a stacked capacitor cell of DRAM. As is usual, a MOS transistor is fabricated in a silicon substrate, and interlayer insulator and interconnection are formed on the substrate. As an upper interlayer insulator film which serves as an etch stop film, a silicon nitride or silicon oxide film is formed, and this film is overlaid with a planarizing film such as a BPSG film. Then, a contact hole is formed and filled with a conductor to provide a storage node contact. After that the planarizing film is removed, and a cylindrical storage node is formed on the exposed etch stop film. The cylindrical part of the storage node is formed by patterning a relatively thick BPSG film so as to provide a cylindrical wall face, forming a polysilicon sidewall on the cylindrical wall face and then completely removing the BPSG film. At this stage the etch stop film retains sufficient thickness since this film was protected by the planarizing film at the stage of forming the storage node contact. So, no defects such as cavities develop in interlayer insulators. By this method the total thickness of interlayer insulators can be reduced, so that the storage node contact can be formed accurately and reliably.
REFERENCES:
patent: 5137842 (1992-08-01), Chan et al.
patent: 5550076 (1996-08-01), Chen
patent: 5643819 (1997-07-01), Tseng
patent: 5677221 (1997-10-01), Tseng
patent: 5681773 (1997-10-01), Tseng
patent: 5721168 (1998-02-01), Wu
patent: 5726086 (1998-03-01), Wu
W. Wakamiya et al., "Novel Stacked Capacitor Cell for 64Mb DRAM", 1989 VLSI Symposium, pp. 69-70.
Mulpuri S.
NEC Corporation
Niebling John F.
LandOfFree
Method of producing cylindrical storage node of stacked capacito does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing cylindrical storage node of stacked capacito, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing cylindrical storage node of stacked capacito will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-408525