Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2004-12-13
2009-12-22
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE23181, C257S414000, C257S419000, C257S420000, C438S048000, C438S125000, C333S186000
Reexamination Certificate
active
07635901
ABSTRACT:
The microcavity is delineated by a cover which is formed on a sacrificial layer and in which at least one hole is formed for removal of the sacrificial layer. A plug covers the hole and part of the cover along the periphery of the hole. The plug is made from a material that can undergo creep deformation and can be a polymerized material, in particular selected from photoresists and polyimide, or glass, in particular selected from phosphosilicate glasses. A sealing layer is deposited on the plug and the cover such as to seal the microcavity hermetically. The hole has, for example, a dimension of less than 5 micrometers and is preferably arranged on the highest part of the microcavity. The plug can have a thickness of between 2 and 6 micrometers.
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Gogoi et al., “Force Balanced Micromachined Pressure Sensors,” IEEE Transactions on Electron Devices, vol. 48, No. 8, IEEE, N.Y., Aug. 2001, pp. 1575-1584.
Chu Chris C
Commissariat a l''Energie Atomique
Oliff & Berridg,e PLC
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