High-k thin film grain size control

Details High-k thin film grain size control High-k thin film grain size control

2005-03-31

2009-12-08

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S003000, C438S396000, C438S778000, C257S310000, C257S532000, C257SE39009, C257SE31051, C977S773000

Reexamination Certificate

active

07629269

ABSTRACT:
A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

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