Buffer layers for device isolation of devices grown on silicon

Details Buffer layers for device isolation of devices grown on silicon Buffer layers for device isolation of devices grown on silicon

2006-09-27

2009-02-24

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S483000, C438S046000, C438S029000, C257SE21218

Reexamination Certificate

active

07494911

ABSTRACT:
Various embodiments proved a buffer layer that is grown over a silicon substrate that provides desirable isolation for devices formed relative to III-V material device layers, such as InSb-based devices, as well as bulk thin film grown on a silicon substrate. In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate. In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.

REFERENCES:
patent: 6372981 (2002-04-01), Ueda et al.
patent: 7323764 (2008-01-01), Wallis
patent: 2003/0012249 (2003-01-01), Eisenbeiser
patent: 2004/0069991 (2004-04-01), Dunn et al.
patent: 2004/0169180 (2004-09-01), Udagawa

Affiliated with

Also associated with

Rating

Buffer layers for device isolation of devices grown on silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buffer layers for device isolation of devices grown on silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buffer layers for device isolation of devices grown on silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4070707