Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-01-23
2009-10-20
Garber, Charles D. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S444000, C257SE27141, C257SE29147, C349S043000, C349S152000
Reexamination Certificate
active
07605416
ABSTRACT:
A gate wire including a gate line and a gate electrode is formed on a substrate and a gate insulating layer is formed on the substrate. A semiconductor pattern and an etching assistant pattern are formed on the gate insulating layer and a source/drain conductor pattern and an etching assistant layer are formed on the semiconductor pattern and the etching assistant pattern. A data wire including a data line and source and drain electrodes separated from each other is formed by removing the etching assistant layer and partly removing the source/drain conductor pattern. A pixel electrode connected to the drain electrodes is formed.
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Choe Hee-Hwan
Hong Mun-Pyo
Roh Nam-Seok
Song Keun-Kyu
Cantor & Colburn LLP
Garber Charles D.
Pompey Ron E
Samsung Electronics Co,. Ltd.
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