Semiconductor device having improved halo structures and a...

Details Semiconductor device having improved halo structures and a... Semiconductor device having improved halo structures and a...

2003-03-27

2009-12-01

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21411

Reexamination Certificate

active

07625802

ABSTRACT:
A method of forming the halo structures of a field effect transistor is disclosed. The halo structures are formed by implanting ions of a dopant material into the substrate on which the transistor is to be formed, wherein the tilt angle of the ion beam with respect to the surface of the substrate is varied according to a predefined time schedule comprising a plurality of implanting periods.

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Stanley Wolf Silicon Processing for the VSLI Era, vol. 1, Lattice Press 1986, pp. 281-282.
Translation of Official Communication from related German Patent Application No. 102 45 608.9 dated Sep. 1, 2009.

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