Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-04-02
2009-08-25
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S592000, C438S630000, C438S657000, C257S406000
Reexamination Certificate
active
07579231
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
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Matsuo Kouji
Nakamura Shin-ichi
Saito Tomohiro
Suguro Kyoichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Rao Steven H
Weiss Howard
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