Thin-film transistor substrate and method of manufacturing...

Details Thin-film transistor substrate and method of manufacturing... Thin-film transistor substrate and method of manufacturing...

2007-11-21

2009-10-27

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S158000, C438S250000, C257S057000, C257S059000, C257S072000, C257S379000, C257SE21002

Reexamination Certificate

active

07608493

ABSTRACT:
A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate metal pad is disposed on a substrate. The capacitor dielectric layer is disposed on the lower storage electrode and the gate insulation layer is disposed on the substrate. The active pattern includes an active layer and a dummy active layer disposed on the gate insulation layer in a gate electrode region and a gate metal pad region, respectively. A portion of the upper storage electrode is disposed on the capacitor dielectric layer exposed through a first contact hole in the gate insulation layer.

REFERENCES:
patent: 7112512 (2006-09-01), Lan et al.
patent: 7351623 (2008-04-01), Ahn
patent: 2007/0262347 (2007-11-01), You

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