Non-thermally annealed doped semiconductor material and...

Details Non-thermally annealed doped semiconductor material and... Non-thermally annealed doped semiconductor material and...

2007-02-12

2009-08-04

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S378000, C438S535000, C257S659000, C257SE21471, C257SE21475

Reexamination Certificate

active

07569458

ABSTRACT:
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10-25 μm and more particularly 15-18 μm, or a frequency ranging from 12-30 THz and more particularly 16.5-20 THz.

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