Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-04-27

2008-12-16

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S585000, C438S587000, C257SE21177, C257SE21290

Reexamination Certificate

active

07465618

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.

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patent: 2001-160557 (2001-06-01), None
Masahiko Hiratani, et al., “Effective Electron Mobility Reduced by Remote Charge Scattering in High- κ Gate Stacks,” Jpn. J. Appl. Phys., Jul. 2002, pp. 4521-4522, vol. 41, Part 1, No. 7A, The Japan Society of Applied Physics.
C. Hobbs, et al., “Fermi Level Pining at the PolySi/Metal Oxide Interface,” 2003 Symposium on VLSI Technology Digest Technical Papers.
Masahiko Hiratani, et al. “Scaling limit of high- κ gate dielectrics,” Semiconductor Integrated Circuit Symposium, Dec. 13-14, 2001, pp. 79-84.
V.N. Parfenekov, et al., “Dokl. Akad. Nauk SSSR,” 1969, 185[4]840.
N.A. Torpov, et al., “Izv. Akad. Nauk SSSR,” 1961, Otd. Khim. Nauk 4, 547.

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