Method of forming a stable transistor by dual source/drain...

Details Method of forming a stable transistor by dual source/drain... Method of forming a stable transistor by dual source/drain...

2005-12-29

2008-11-18

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S528000, C257SE21640

Reexamination Certificate

active

07452780

ABSTRACT:
A method of forming a transistor includes: forming a gate oxide layer and a gate polysilicon layer on a silicon substrate; forming low-energy ion implantation regions in the silicon substrate and in alignment with both sidewalls of the gate polysilicon layer; forming gate spacers on both sidewalls of the gate polysilicon layer; forming amorphous layers on surfaces of the gate polysilicon layer and the silicon substrate by implanting impurities at a low implantation energy into the gate polysilicon layer and the silicon substrate; and forming high-energy ion implantation regions by implanting source/drain impurities at a high implantation energy into the silicon substrate including the gate polysilicon layer and the amorphous layer.

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