Magneto-resistive RAM having multi-bit cell array structure

Details Magneto-resistive RAM having multi-bit cell array structure Magneto-resistive RAM having multi-bit cell array structure

2005-10-27

2008-12-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07463509

ABSTRACT:
A magnetic random access memory (RAM) with a multi-bit cell array structure includes an access transistor formed on a substrate, first through third resistance-variable elements, and first through third current supplying lines. The first through third resistance-variable elements are disposed between a bit line and the access transistor, and electrically connected to each other. The first through third current supplying lines are stacked alternately with the first through third resistance-variable elements. The first through third resistance-variable elements have equal resistances.

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