Flash memory structure and fabrication method thereof

Details Flash memory structure and fabrication method thereof Flash memory structure and fabrication method thereof

2006-09-14

2008-11-04

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

07445995

ABSTRACT:
A flash memory structure comprises a semiconductor substrate, a source region, a drain region, a first insulating dielectric layer, a floating gate, a second insulating dielectric layer, and a control gate. The semiconductor substrate has a first top surface and a second top surface that is lower than the first top surface. The source region and the drain region are respectively in the second top surface and the first top surface of the semiconductor substrate, and the semiconductor substrate connecting the source region and the drain region is a vertical channel region. The whole channel region is covered by the first insulating dielectric layer, the floating gate, the second insulating dielectric layer, and the control gate in turn.

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