Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-07-23
2008-12-30
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189180, C365S189190
Reexamination Certificate
active
07471575
ABSTRACT:
A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. Redundant circuits such as a processor for processing data among stacks each associated with multiple memory cells are factored out. The processor is implemented with an input logic, a latch and an output logic. The input logic can transform the data received from either the sense amplifier or the data latches. The output logic further processes the transformed data to send to either the sense amplifier or the data latches or to a controller. This provides an infrastructure with maximum versatility and a minimum of components for sophisticated processing of the data sensed and the data to be input or output.
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Cernea Raul-Adrian
Chan Siu Lung
Khalid Shahzad
Li Yan
Davis , Wright, Tremaine, LLP
Graham Kretelia
Hoang Huan
Sandisk Corporation
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