Trench memory

Details Trench memory Trench memory

2008-01-31

2008-11-04

Pham, Hoai V. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C257SE21651

Reexamination Certificate

active

07445988

ABSTRACT:
A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially doped collar can be done by deposition of a doped insulator in the trench, removal of a portion of the doped deposition, deposition of an undoped insulator in the trench and removal of a portion of the doped and undoped insulators.

REFERENCES:
patent: 5482883 (1996-01-01), Rajeevakumar
patent: 6163045 (2000-12-01), Mandelman et al.
patent: 6265279 (2001-07-01), Radens et al.
patent: 6300683 (2001-10-01), Nagasaka et al.
patent: 6373086 (2002-04-01), Mandelman et al.
patent: 6399977 (2002-06-01), Alsmeier
patent: 6465370 (2002-10-01), Schrems et al.
patent: 6818534 (2004-11-01), Davis et al.
patent: 6828191 (2004-12-01), Wurster et al.
patent: 6917064 (2005-07-01), Kito et al.
patent: 6953725 (2005-10-01), Hsu et al.
patent: 2005/0093044 (2005-05-01), Cheng et al.

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