Non-volatile memory cells and methods of manufacturing the same

Details Non-volatile memory cells and methods of manufacturing the same Non-volatile memory cells and methods of manufacturing the same

2005-08-04

2008-12-23

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C257SE21429

Reexamination Certificate

active

07468299

ABSTRACT:
Methods for forming non-volatile memory cells include: (a) providing a semiconductor substrate having at least two source/drain regions, and a dielectric material disposed on the substrate above at least one of the at least two source/drain regions wherein the dielectric material has an exposed surface, and wherein the at least two source/drain regions are separated by a recess trench having an exposed surface, wherein the trench extends downward into the substrate to a depth position below the at least two source/drain regions; (b) forming a charge-trapping layer on the exposed surfaces of the dielectric material and the recess trench; and (c) forming a gate above the charge-trapping layer.

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