Phase change memory device and program method thereof

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S203000

Reexamination Certificate

active

07471553

ABSTRACT:
A phase change memory device includes a memory cell having a phase change material, a write driver adapted to supply a program current to the memory cell during a programming interval, and a pump circuit adapted to enhance a current supply capacity of the write driver during the programming interval. The pump circuit is activated prior to the programming interval in response to an external control signal.

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patent: 1020050021643 (2005-03-01), None

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