Method of characterizing a chamber based upon concurrent...

Details Method of characterizing a chamber based upon concurrent... Method of characterizing a chamber based upon concurrent...

2006-12-11

2008-12-30

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C216S059000

Reexamination Certificate

active

07470626

ABSTRACT:
A plasma reactor chamber is characterized by performing two steps for each one of plural selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. The second step consists of deducing, from the corresponding chamber parameter data generated in the first step, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable, and constructing combinations of these functions that are three variable functions having each of the chamber parameters as a variable.

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