Method of forming a catalyst layer on the barrier layer of a...

Details Method of forming a catalyst layer on the barrier layer of a... Method of forming a catalyst layer on the barrier layer of a...

2005-08-16

2008-12-16

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S633000, C438S638000, C438S692000, C257SE21174, C257SE21175, C257SE21579, C257SE21585

Reexamination Certificate

active

07465652

ABSTRACT:
A method is provided for depositing a conductive material in a sub-micron recessed feature formed on a substrate. The method begins by depositing a barrier layer over a dielectric layer disposed on the substrate while under a vacuum of the type found in a vacuum chamber. A catalytic layer is deposited over the barrier layer without breaking the vacuum. A conductive material layer is deposited over the catalytic layer by electroless deposition.

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