Method with high gapfill capability for semiconductor devices

Details Method with high gapfill capability for semiconductor devices Method with high gapfill capability for semiconductor devices

2006-10-06

2008-11-25

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S424000, C438S444000, C438S622000, C438S623000, C257SE21268, C257SE21548, C257SE21549, C257SE21564, C257SE21576

Reexamination Certificate

active

07456067

ABSTRACT:
A method of performing an STI gapfill process for semiconductor devices is provided. In a specific embodiment of the invention, the method includes forming an stop layer overlying a substrate. In addition, the method includes forming a trench within the substrate, with the trench having sidewalls, a bottom, and a depth. The method additionally includes forming a liner within the trench, the liner lining the sidewalls and bottom of the trench. Furthermore, the method includes filling the trench to a first depth with a first oxide. The first oxide is filled using a spin-on process. The method also includes performing a first densification process on the first oxide within the trench. In addition, the method includes depositing a second oxide within the trench using an HDP process to fill at least the entirety of the trench. The method also includes performing a second densification process on the first and second oxides within the trench.

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