Semiconductor device having high voltage MOS transistor and...

Details Semiconductor device having high voltage MOS transistor and... Semiconductor device having high voltage MOS transistor and...

2005-12-30

2008-12-23

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S981000, C257SE21427

Reexamination Certificate

active

07468300

ABSTRACT:
A semiconductor device having a high voltage MOS transistor. The device includes a gate oxide layer disposed between a gate electrode and a substrate on an active area and having relatively thick portions at edges thereof. A fabrication method includes forming on the substrate is a nitride layer having an opening in a high voltage region. An oxide layer is deposited over the substrate and anisotropically etched to remain only on sidewalls of the opening. A first gate oxide layer is formed on the substrate in the opening, and the nitride layer is removed. Then a second gate oxide layer is formed over the substrate such that the second gate oxide layer has a relatively thinner thickness than the first gate oxide layer. Gate electrodes are then formed in the high voltage region and the low voltage region.

REFERENCES:
patent: 6818514 (2004-11-01), Kim et al.
patent: 7129137 (2006-10-01), Matsumoto

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