Semiconductor device

Details Semiconductor device Semiconductor device

2007-08-20

2008-08-12

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S223000, C438S224000, C438S227000, C438S228000, C438S585000, C438S587000, C257S369000, C257S371000, C257S407000, C257S412000, C257SE27067, C257SE29128

Reexamination Certificate

active

07410855

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.

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Samavedam, et al., “Dual-Metal Gate CMOS with HfO2Gate Dielectric”, IEEE, IEDM, pp. 1-3, (2002).
Narayanan, et al., “Dual Work Function Metal Gate CMOS using CVD metal electrodes”, IEEE, Symposium on VLSI Technology, Digest of Technical Papers, pp. 192-193, (2004).
R. Ichihara et al., “Ta-based metal gates (Ta1TaBx1TaNxand TaCx)-Modulated Work Function and Improved Thermal Stability,” Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (Sep. 13-15, 2005), pp. 850-851.

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