Semiconductor device

Details Semiconductor device Semiconductor device

2006-07-03

2008-10-21

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S357000, C257S367000, C257S371000, C257SE27046

Reexamination Certificate

active

07439590

ABSTRACT:
A semiconductor device features connecting gate patterns of all transistors to a N+ or +P junction by the first connected wiring layer to prevent degradation of characteristics of the semiconductor device which results from plasma damages during a process. In order to connect a junction to a gate layer weak to plasma damages, the gate layer is connected to the N+ or P+ junction when a first wiring layer after a transistor is formed. As a result, when the gate layer is charged up by plasma damages, the gate layer is discharged by the junction or provided to receive (−) ions or electrons so that a gate oxide is not affected by plasma damages.

REFERENCES:
patent: 5955764 (1999-09-01), Katsube
patent: 6410964 (2002-06-01), Shida
patent: 6828604 (2004-12-01), Inoue
patent: 10-2002-0032115 (2002-05-01), None
patent: 1020040054093 (2004-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4018821