Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2008-08-26
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S352000
Reexamination Certificate
active
07417286
ABSTRACT:
Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same are provided. The semiconductor integrated circuit devices include an interlayer insulating layer formed on a semiconductor substrate and a single crystalline semiconductor plug penetrating the interlayer insulating layer. A single crystalline semiconductor body pattern is provided on the interlayer insulating layer. The single crystalline semiconductor body pattern has an elevated region and contacts the single crystalline semiconductor plug. The method of forming the single crystalline semiconductor body pattern having the elevated region includes forming a sacrificial layer pattern covering the single crystalline semiconductor plug on the interlayer insulating layer. A capping layer is formed to cover the sacrificial layer pattern and the interlayer insulating layer, and the capping layer is patterned to form an opening which exposes a portion of the sacrificial layer pattern. Subsequently, the sacrificial layer pattern is selectively removed to form a cavity in the capping layer, and a planarized single crystalline semiconductor body pattern is formed to fill the cavity and the opening.
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Cho Won-Seok
Jang Jae-Hoon
Jung Soon-Moon
Kim Jong-Hyuk
Kim Sung-Jin
Menz Douglas M
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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