Semiconductor devices and methods of fabricating the same

Details Semiconductor devices and methods of fabricating the same Semiconductor devices and methods of fabricating the same

2006-11-28

2008-10-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S319000

Reexamination Certificate

active

07442988

ABSTRACT:
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a second gate line formed in the pattern of spacer on the second sidewall of the fin. First and second impurity regions are disposed in the fin. The first and second impurity regions are isolated from each other and define a channel region in the fin between the first and second gate lines.

REFERENCES:
patent: 6157060 (2000-12-01), Kerber
patent: 2004/0232471 (2004-11-01), Shukuri
patent: 2004-253571 (2004-09-01), None
patent: 10-0417449 (2004-06-01), None

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