Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-12-16
2008-10-07
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S785000, C257SE21192
Reexamination Certificate
active
07432183
ABSTRACT:
A method of forming a thin film including zirconium titanium oxide including introducing a reactant including a mixture of a zirconium precursor and a titanium precursor onto a substrate, and introducing an oxidizing agent onto the substrate to form a solid material including zirconium titanium oxide on the substrate is provided. The thin film may be applied to a gate insulation layer of the gate structure, a dielectric layer of the capacitor or a flash memory device, and methods of forming the same are provided.
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Cho Kyu-Ho
Kim Ki-Chul
Lee Jin-Il
Lim Han-Jin
Lim Jae-Soon
Dang Trung
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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