Method for manufacturing semiconductor memory

Details Method for manufacturing semiconductor memory Method for manufacturing semiconductor memory

2006-11-20

2008-10-21

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S386000, C438S399000, C257S296000, C257SE27084, C257SE27097

Reexamination Certificate

active

07439126

ABSTRACT:
A method for manufacturing a semiconductor memory having a memory cell selection transistor and a capacitor, comprises a step of forming a polysilicon plug having a large-diameter portion on a side of the capacitor, a step of forming a hole reaching the large-diameter portion by etching an insulating film formed on the large-diameter portion using the large-diameter portion as an etching stopper layer, and a step of forming a conductive film inside the hole so as to serve as an electrode for the capacitor.

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