Organic light emitting display with single crystalline...

Details Organic light emitting display with single crystalline... Organic light emitting display with single crystalline...

2005-11-10

2008-08-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S099000, C438S082000, C438S455000, C257SE21121, C257SE21212

Reexamination Certificate

active

07416924

ABSTRACT:
Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.

REFERENCES:
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: 2005/0051777 (2005-03-01), Hill
patent: 2005/0221568 (2005-10-01), Ishida et al.
patent: 2002-156923 (2002-05-01), None

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