Semiconductor device with capacitor and method for...

Details Semiconductor device with capacitor and method for... Semiconductor device with capacitor and method for...

2006-12-19

2008-10-21

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000

Reexamination Certificate

active

07439130

ABSTRACT:
A method of fabricating a semiconductor device having a capacitor is provided. The method includes forming second, third, fourth, and fifth insulating layers on a first conductive layer formed in a first insulating layer. The fourth insulating layer is patterned into a first pattern before forming the fifth insulating layer thereupon. A capacitor and contact plug are formed by etching the fifth insulating layer to expose the first pattern; etching the third insulating layer using the exposed first pattern as a mask to expose the second insulating layer; exposing the first conductive layer at a capacitor region and contact plug region by etching the exposed second insulating layer; forming a second conductive layer on the exposed first conductive layer and sidewalls of the insulating layers; forming a dielectric on the second conductive layer in the capacitor region; and filling the capacitor and contact plug regions with a third conductive layer.

REFERENCES:
patent: 6174803 (2001-01-01), Harvey
patent: 6271084 (2001-08-01), Tu et al.
patent: 6313026 (2001-11-01), Huang et al.
patent: 6391713 (2002-05-01), Hsue et al.
patent: 6441494 (2002-08-01), Huang et al.
patent: 6717193 (2004-04-01), Olewine et al.
patent: 6794262 (2004-09-01), Ning et al.
patent: 6958509 (2005-10-01), Korner et al.
patent: 7071054 (2006-07-01), Park
patent: 7071057 (2006-07-01), Park
patent: 2005/0082592 (2005-04-01), Chang et al.
patent: 2005/0142737 (2005-06-01), Park
patent: 2005/0170583 (2005-08-01), Park
patent: 2007/0155091 (2007-07-01), Park

Affiliated with

Also associated with

Rating

Semiconductor device with capacitor and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with capacitor and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with capacitor and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4002960