Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-24
2008-08-26
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000, C257SE21010
Reexamination Certificate
active
07416936
ABSTRACT:
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.
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Notice of Second Office Action from the State Intellectual Property Office of the People's Republic of China mailed Jan. 26, 2007, in Chinese patent application No. 2004-10062627.6, and English translation.
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Kil Deok-Sin
Roh Jae-Sung
Sohn Hyun-Chul
Dang Trung
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
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