Silicon lanthanide oxynitride films

Details Silicon lanthanide oxynitride films Silicon lanthanide oxynitride films

2006-08-31

2008-10-07

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27084, C257SE29343, C257SE21008, C257SE21267, C438S240000

Reexamination Certificate

active

07432548

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a silicon lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The silicon lanthanide oxynitride film may be arranged as a layered structure having one or more monolayers. Metal electrodes may be disposed on a dielectric containing a silicon lanthanide oxynitride film.

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