Resist developer and resist pattern formation method using same

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S325000, C430S326000, C430S327000, C430S331000

Reexamination Certificate

active

07407739

ABSTRACT:
A resist developer capable of forming a high resolution resist pattern with good shape and little film thinning is provided, together with a resist pattern formation method using such a developer. The resist developer is an aqueous solution comprising an ammonium hydroxide represented by a general formula (I): R1nR24-nN+.OH−wherein R1is a lower alkyl group in which the number of carbon atoms is A, R2is a lower alkyl group in which the number of carbon atoms is B, A<B, and n is an integer from 1 to 3.

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